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| BCP 69 PNP Silicon AF Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary type: BCP 68 (NPN) 4 3 2 1 VPS05163 Type BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 Maximum Ratings Parameter Marking BCP 69 1=B BCP 69-10 1 = B BCP 69-16 1 = B BCP 69-25 1 = B Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C Package SOT-223 SOT-223 SOT-223 SOT-223 Symbol VCEO VCES VCBO VEBO Values 20 25 25 5 1 2 100 200 1.5 150 -65 ... 150 Unit V V V A mA W C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS 72 17 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-20-1999 BCP 69 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 DC current gain 1) IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t 300s, D = 2% Unit max. 100 100 nA A V typ. - V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICBO hFE hFE 20 25 25 5 50 85 85 100 160 hFE 100 160 250 - 375 160 250 375 0.5 V 60 - VCEsat VBE(ON) - 0.6 - 1 fT - 100 - MHz 2 Oct-20-1999 BCP 69 Total power dissipation Ptot = f (TA*;TS ) Transition frequency fT = f (IC) VCE = 5V * Package mounted on epoxy BCP 69 EHP00282 Ptot 1.6 W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 3 MHz fT 5 BCP 69 EHP00283 10 2 TA TS 5 0 50 100 C TA ; TS 150 10 1 0 10 10 1 10 2 mA 10 3 C Collector cutoff current ICBO = f (TA) VCB = 25V 10 5 BCP 69 EHP00284 DC current gain hFE = f (I C) VCE = 1V 10 3 h FE 5 100 C 10 2 5 25 C -50 C BCP 69 EHP00285 CBO nA 10 4 10 3 max 10 2 typ 10 1 10 1 5 10 0 0 50 100 C TA 150 10 0 10 0 10 1 10 2 mA 10 4 C 3 Oct-20-1999 BCP 69 Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 BCP 69 EHP00286 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 BCP 69 EHP00287 10 4 10 4 mA C mA C 10 3 5 100 C 25 C -50 C 10 3 100 C 25 C -50 C 10 2 5 10 2 10 1 5 10 1 10 0 0 0.2 0.4 0.6 V 0.8 10 0 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 V CEsat Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC 10 2 5 BCP 69 EHP00288 D= tp T tp T 10 1 5 D = 0.0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 1 4 Oct-20-1999 |
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